Electrothermomigration-induced failure in power IC metallization
Nguyen, H.V. and Salm, C. and Krabbenborg, B.H. and Bisschop, J. and Mouthaan, A.J. and Kuper, F.G. (2003) Electrothermomigration-induced failure in power IC metallization. In: 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003, 25-26 November 2003, Veldhoven, The Netherlands (pp. pp. 622-630).
Restricted to UT campus only : Request a copy
|Abstract:||Metal migration by driving force of electron-flow and temperature gradient is a major reliability concern in power integrated circuits, especially for advanced integrated circuits where there are increasing density of the integrated power components and power dissipation. In this paper, we present a study of the combined effects of electromigration and thermomigration. A special test chip is designed for this study, in which several on-chip heater elements and temperature sensor are realized to impose and measure a temperature gradient, respectively. Our experimental results show that the electromigration lifetimes are much shorter in the presence of a temperature gradient than in a uniform temperature. The shortening of the electromigration lifetimes can be attributed to the effect of temperature gradient on electromigration-induced failure, rather than an additional
driving force by thermomigration (due to a temperature gradient). Our observation is in qualitative agreement with recent theoretical model.
|Item Type:||Conference or Workshop Item|
|Copyright:||© 2003 STW Technology Foundation|
Electrical Engineering, Mathematics and Computer Science (EEMCS)
|Link to this item:||http://purl.utwente.nl/publications/67744|
|Export this item as:||BibTeX|
Daily downloads in the past month
Monthly downloads in the past 12 months
Repository Staff Only: item control page
Metis ID: 213259