Separation of random telegraph signals from 1/f noise in MOSFETs


Kolhatkar, J.S. and Salm, C. and Wallinga, H. (2003) Separation of random telegraph signals from 1/f noise in MOSFETs. In: 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003, 25-26 November 2003, Veldhoven, The Netherlands (pp. pp. 614-617).

[img] PDF - Published Version
Restricted to UT campus only
: Request a copy
Abstract:The low-frequency noise power spectrum of small dimension MOSFETs is dominated by Lorentzians arising from Random Telegraph Signals (RTS). The low-frequency noise is observed to decrease when the devices are periodically switched �off�. The amount of noise reduction is observed to be dependent on the amplitude of the switching gate signal. The time-domain technique of determining the statistical lifetimes and amplitudes of the RTS by fitting the signal level histogram of the time-domain record to two-Gaussian histograms is used for analysing the �noisy� RTS along with the device background noise. The device background noise or 1/f noise of the device can then be separated from the RTS using this procedure. In this work, the RTS and the corresponding 1/f noise observed in MOSFETs, under both constant and switched biased conditions, have been
investigated. Also, the noise reduction as a function of gate-switching amplitude during switched biased conditions is investigated.
Item Type:Conference or Workshop Item
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:
Export this item as:BibTeX
HTML Citation
Reference Manager


Repository Staff Only: item control page

Metis ID: 213262