On oxidation kinetics and electrical quality of gate oxide grown in H2O or D2O ambient


Hof, A.J. and Kovalgin, A.Y. and Woerlee, P.H. and Schmitz, J. (2003) On oxidation kinetics and electrical quality of gate oxide grown in H2O or D2O ambient. In: 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003, 25-26 November 2003, Veldhoven, The Netherlands (pp. pp. 743-747).

[img] PDF
Restricted to UT campus only
: Request a copy
Abstract:In recent literature, a controversy has arisen over the question whether deuterium improves the stability of the MOS gate dielectric. This work presents a wide range of growth rate data of H2O and D2O gate oxides in an ultra-diluted ambient. A considerable and constant difference in oxidation rate is found between the two species. Although literature suggests a correlation between growth rate and dielectric quality, the degradation measurements on MOS capacitors with 8.5 nm gate oxides grown at 950 °C at low partial pressure show only a very weak difference between the isotopes. It appears that the difference in oxidation rate does not affect the gate oxide quality, and high quality grown gate oxides do not appear to benefit from the deuterium isotope effect.
Item Type:Conference or Workshop Item
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/67741
Export this item as:BibTeX
HTML Citation
Reference Manager


Repository Staff Only: item control page