High external quantum efficiency of the lateral P-I-N diodes realized of silicon on insulator (SOI) material

Hoang, T. and Le Minh, P. and Holleman, J. and Schmitz, J. and Wallinga, H. (2003) High external quantum efficiency of the lateral P-I-N diodes realized of silicon on insulator (SOI) material. In: Proceedings of the 6th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2003, 25 - 26 November 2003, Veldhoven, The Netherlands.

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Abstract:	The infrared light emission of the lateral P-I-N diodes fabricated on SIMOX SOI (Separation by Implanted OXygen Silicon On Insulator) substrates show a high external quantum efficiency of around 0.025 to 0.1 %. The isolation of the thin silicon sheet (called device layer) from the buried oxide layer is very appropriate for that purpose. In this paper, the devi ce fabrication process, working principle and properties as well as possible applications will be discussed. The electrical and optical characteristics of the device with different active region lengths were measured. The SOI devices with very thin active region (<10nm) were manufactured by thinning the SOI layer by oxidation. These devices show wider emission spectra compared to that of unthinned samples. This device poses a potential integration of an all silicon on-chip optical interconnection scheme with light emitter, wave -guide and detector.
Item Type:	Conference or Workshop Item
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/67740
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