Atomic layer deposition of W - based layers on SiO2

Bystrova, S. and Holleman, J. and Wolters, R.A.M. and Aarnink, A.A.I. (2003) Atomic layer deposition of W - based layers on SiO2. In: 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003, 25-26 November 2003, Veldhoven, The Netherlands.

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Abstract:	W<Si> and W1-xNx , where x= 15- 22 at%, thin films were grown using the ALD (Atomic Layer Deposition) principle. Growth rate of W<Si> films is about 4- 5 monolayers/ cycle at 300- 350 ºC. Growth rate of W1-xNx is 0.5 monolayer/cycle at 325- 350 ºC. Standard Deviation (STDV) of thickness is about 2% for 20nm layers. Specific resistivity is 180 mW cm for W<Si> and as low as 220-340 mWcm for W1-xNx 20nm films. 4- point probe sheet resistivity test is applied to Cu/ Barrier/ SiO2 stacks with ramping temperature. No changes of normalized resistance reflecting Cu-Barrier interaction was measured after 500 ºC annealing cycle
Item Type:	Conference or Workshop Item
Faculty:	Science and Technology (TNW) Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Mesoscale Chemical Systems (MCS) Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/67739
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