In-situ RHEED analysis of atomic layer deposition and characterization of AL203 gate dielectrics

Bankras, R.G. and Aarnink, A.A.I. and Holleman, J. and Schmitz, J. (2003) In-situ RHEED analysis of atomic layer deposition and characterization of AL203 gate dielectrics. In: 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003, 25-26 November 2003, Veldhoven, The Netherlands.

PDF
Restricted to UT campus only: Request a copy
172Kb

Abstract:	A new custom designed reactor was realized at the MESA+ cleanroom to fabricate high-k dielectrics using atomic layer deposition (ALD). Key features of the reactor are: a small reactor volume, in-situ RHEED analysis and low background pressure. The effect of precursor and purge pulse times is discussed. Capacitance-voltage and currentvoltage characteristics are presented for a 7.1 nm layer with a uniformity of 0.1 nm.
Item Type:	Conference or Workshop Item
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/67738
Export this item as:	BibTeX EndNote HTML Citation Reference Manager

Show download statistics for this publication

Repository Staff Only: item control page