The RF-CV method for characterization of leaky gate dielectrics

Schmitz, J. and Cubaynes, F.N. and Kort de, R. and Havens, R.J. and Scholten, A.J. and Tiemeijer, L.F. (2004) The RF-CV method for characterization of leaky gate dielectrics. In: 13th Biannual Conference on Insulating Films on Semiconductors, 18 June 2003, Barcelona, Spain.

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Abstract:	This paper presents a new method, developed for the capacitance-voltage (C-V ) characterization of leaky dielectrics. The method comprises measurements in the gigahertz range on specially designed RF test structures. The method is veri?ed against high-frequency C-V measurements on NMOS and PMOS structures. It yields reliable results even when the gate leakage is in excess of 100 A/cm2.
Item Type:	Conference or Workshop Item
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/67737
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Metis ID: 213397