A reliability model for interlayer dielectrics cracking during very fast thermal cycling

Nguyen, H.V. and Salm, C. and Krabbenborg, B.H. and Bisschop, J. and Mouthaan, A.J. and Kuper, F.G. (2003) A reliability model for interlayer dielectrics cracking during very fast thermal cycling. In: Advanced Metallization Conference 2003, September 29 - October 1, 2003 (Tokyo) and 21-23 October 2003 (Montreal), Tokyo, Japan and Montreal, Canada.

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Abstract:	Interlayer dielectric (ILD) cracking can result in short circuits of multilevel interconnects. This paper presents a reliability model for ILD cracking induced by fast thermal cycling (FTC) stress. FTC tests have been performed under different temperature ranges (∆T) and minimum temperatures (Tmin). The Weibull distributions of time to failure are relatively well behaved with a similar slope. The number of cycles to failure increases with increasing Tmin, even though ∆T increases. The Coffin-Manson law is used to model the failure rate only for test results having the same Tmin. The obtained exponent value is in the range of brittle material cracking mechanism, which is confirmed by failure analysis and modeling of the failure mechanism. An extended Coffin-Manson law is developed to model failure rates during FTC stress.
Item Type:	Conference or Workshop Item
Copyright:	© 2003 Materials Research Society
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/67736
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Metis ID: 220203