RF capacitance-voltage characterization of MOSFETs with high-leakage dielectric


Schmitz, J. and Cubaynes, F.N. and Havens, R.J. and Kort, R. de and Scholten, A.J. and Tiemeijer, L.F. (2003) RF capacitance-voltage characterization of MOSFETs with high-leakage dielectric. IEEE Electron Device Letters, 24 (1). pp. 37-39. ISSN 0741-3106

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Abstract:We present a MOS Capacitance-Voltage measurement methodology that, contrary to present methods, is highly robust against gate leakage current densities up to 1000 A/cm/sup 2/. The methodology features specially designed RF test structures and RF measurement frequencies. It allows MOS parameter extraction in the full range of accumulation, depletion, and inversion.
Item Type:Article
Copyright:© 2003 IEEE
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/67733
Official URL:https://doi.org/10.1109/LED.2002.807016
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