Reservoir effect and maximum allowed VIA misalignment for AICu interconnect with tungsten VIA plug

Li, Yuan and Veenstra, Klaas Jelle and Dubois, Jerome and Peters-Wu, Lei and Zomeren van, Agnes and Kuper, Fred (2003) Reservoir effect and maximum allowed VIA misalignment for AICu interconnect with tungsten VIA plug. Microelectronics Reliability, 43 (9-11). pp. 1449-1454. ISSN 0026-2714

PDF
Restricted to UT campus only: Request a copy
1376Kb

Abstract:	In this paper the maximum allowed VIA misalignment is determined from VIA electromogration (EM) performance. It is found that positive overlay of metal interconnect at VIAs serves as a reservoir, leading to increased VIA lifetimes. On the onther hand decreasing metal overlap with VIA does nog reduce the VIA EM lifetime. Besides the reservoir effect, the area or length of the metal lines plays a direct role too in determining the maximum allowed misalignment. Further investigations on mis-aligned VIAs confirm the hypothesis of an electro-chemical process of VIA W corrosion due to charging. This leads to the identification of a sensitive test structure to monitor the concerned VIA W corrosion problem and results in a few options for process improvement. A safe relaxation of the misalignment control, which reduces re-work in the fab, can therefore be allowed without increasing reliability risks.
Item Type:	Article
Copyright:	© 2003 Elsevier
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/67730
Official URL:	http://dx.doi.org/10.1016/S0026-2714(03)00257-9
Export this item as:	BibTeX EndNote HTML Citation Reference Manager

Show download statistics for this publication

Repository Staff Only: item control page

Metis ID: 215851