Plasma charging damage reduction in IC processing by a self-balancing interconnect

Share/Save/Bookmark

Wang, Z. and Ackaert, J. and Salm, C. and Kuper, F.G. and De Backer, E. (2004) Plasma charging damage reduction in IC processing by a self-balancing interconnect. Microelectronics Reliability, 44 (9-11). pp. 1503-1507. ISSN 0026-2714

[img]PDF
Restricted to UT campus only
: Request a copy
659Kb
Abstract:A small TPC has been read out by means of a Medipix2 chip as direct anode. A Micromegas foil was placed Click to view the MathML source above the chip, and electron multiplication occurred in the gap. With a He/isobutane 80/20 mixture, gas multiplication factors up to tens of thousands were achieved, resulting in an efficiency for detecting single electrons of better than 90%. With this new readout technology for gas-filled detectors we recorded many image frames containing 2D images with tracks from cosmic muons. Along these tracks, electron clusters were observed, as well as ?-rays. With a gas layer thickness of only 1 mm, the device could be applied as vertex detector, outperforming all Si-based detectors.
Item Type:Article
Copyright:© 2004 Elsevier
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/67728
Official URL:http://dx.doi.org/10.1016/j.microrel.2004.07.047
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page

Metis ID: 220200