The RF-CV method for characterization of leaky gate dielectrics

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Schmitz, J. and Cubaynes, F.N and Kort, R. de and Havens, R.J. and Scholten, A.J. and Tiemeijer, L.F. (2004) The RF-CV method for characterization of leaky gate dielectrics. Microelectronic Engineering, 72 . pp. 149-153. ISSN 0167-9317

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Abstract:This paper presents a new method, developed for the capacitance�voltage (C�V) characterization of leaky dielectrics. The method comprises measurements in the gigahertz range on specially designed RF test structures. The method is verified against high-frequency C�V measurements on NMOS and PMOS structures. It yields reliable results even when the gate leakage is in excess of 100 A/cm2.
Item Type:Article
Copyright:© 2004 Elsevier Science
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/67725
Official URL:http://dx.doi.org/10.1016/j.mee.2004.01.028
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Metis ID: 218019