Test structures design considerations for RF-CV measurements on leaky dielectrics

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Schmitz, Jurriaan and Cubaynes, Florence N. and Havens, Ramon J. and Kort de, Randy and Scholten, Adries J. and Tiemeijer, Luuk F. (2004) Test structures design considerations for RF-CV measurements on leaky dielectrics. IEEE Transactions on Semiconductor Manufacturing, 17 (2). pp. 150-154. ISSN 0894-6507

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Abstract:We present an MOS capacitance-voltage measurement methodology that, contrary to present methods, is highly robust against gate leakage current densities up to 1000 $A/cm^2$. The methodology features specially designed RF test structures and RF measurement frequencies. It allows MOS parameter extraction in the full range of accumulation, depletion, and inversion.
Item Type:Article
Copyright:© 2004 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/67722
Official URL:http://dx.doi.org/10.1109/TSM.2004.826998
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Metis ID: 217949