Test structures design considerations for RF-CV measurements on leaky dielectrics

Schmitz, Jurriaan and Cubaynes, Florence N. and Havens, Ramon J. and Kort de, Randy and Scholten, Adries J. and Tiemeijer, Luuk F. (2004) Test structures design considerations for RF-CV measurements on leaky dielectrics. IEEE Transactions on Semiconductor Manufacturing, 17 (2). pp. 150-154. ISSN 0894-6507

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Abstract:	We present an MOS capacitance-voltage measurement methodology that, contrary to present methods, is highly robust against gate leakage current densities up to 1000 $A/cm^2$ . The methodology features specially designed RF test structures and RF measurement frequencies. It allows MOS parameter extraction in the full range of accumulation, depletion, and inversion.
Item Type:	Article
Copyright:	© 2004 IEEE
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/67722
Official URL:	http://dx.doi.org/10.1109/TSM.2004.826998
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Metis ID: 217949