The RF charge pump technique for measuring the interface state density on leaky dielectrics


Share/Save/Bookmark

Sasse, Guido T. and Vries, Henk and Schmitz, Jurriaan (2005) The RF charge pump technique for measuring the interface state density on leaky dielectrics. In: 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE, 17-18 November 2005, Veldhoven, The Netherlands (pp. pp. 47-51).

[img] PDF
Restricted to UT campus only
: Request a copy
121kB
Abstract:In this work the RF charge pump technique is presented. It is shown that this technique can provide charge pump data of devices that have a leakage current too high for classical charge pump measurements. The methodology of accurately performing RF charge pump measurements is discussed and measurement results on devices with both a very high leakage current and moderate leakage current are shown. Charge pump data obtained at frequencies of up to 2 GHz are shown. It is verified that the RF charge pump data can indeed be used for extracting the interface state density and it is also investigated how this extraction can be performed accurately.
Item Type:Conference or Workshop Item
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/67720
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page