The effect of an electric field on a lateral silicon light-emitting diode

Le Minh, P. and Hoang, T. and Holleman, J. and Schmitz, J. (2005) The effect of an electric field on a lateral silicon light-emitting diode. In: 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005 (SAFE 2005), 17-18 November 2005, Veldhoven, The Netherlands.

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Abstract:	In this paper, we investigate lateral p+pn+ silicon diodes fabricated on Silicon-On-Insulator. This device distinguishes itself from previous devices by an extra poly-silicon gate electrode on top of the active light-emitting region. The silicon handle substrate is used as second (bottom) gate. When the diode is working under constant current condition, we observe an increased light output as the gate and/or the substrate are biased with negative voltage. The intensity pro?le across the device is also strongly in?uenced. In other words, the light emission from a silicon LED can be varied using a MOS gate. To understand the device thoroughly, the structure has also been simulated showing consistent agreement with experimental measurements.
Item Type:	Conference or Workshop Item
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/67719
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