Characterization of dielectric charging in RF MEMS


Herfst, R.W. and Huizing, H.G.A. and Steeneken, P.G. and Schmitz, J. (2005) Characterization of dielectric charging in RF MEMS. In: 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2005, 17-18 November 2005, Veldhoven, The Netherlands (pp. pp. 11-14).

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Abstract:Capacitive RF MEMS switches show great promise for use in wireless communication devices such as mobile phones, but the successful application of these switches is hindered by the reliability of the devices: charge injection in the dielectric layer (SiN) can cause irreversible stiction of the moving part of the switch. Our research comprises a study on charge injection by stressing the dielectric with electric fields on the order of 1 MV/cm, and by measuring the effects it has on the C-V curve.
Item Type:Conference or Workshop Item
Copyright:© 2005 STW Technology Foundation
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Metis ID: 225623