In-Situ RHEED analysis of atomic layer deposition


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Bankras, R.G. and Holleman, J. and Schmitz, J. (2005) In-Situ RHEED analysis of atomic layer deposition. In: 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005 (SAFE 2005), 17-18 November 2005, Veldhoven, The Netherlands.

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Abstract:Recent efforts on growth modeling of the atomic layer deposition process emphasized the need of an accurate understanding of the process, especially for the initial stage of the deposition. This paper presents results obtained from in-situ RHEED measurements during atomic layer deposition of Al2O3 on Si(001), using Al(CH3)3 and H2O as precursors. The results show the expected decrease in reflected intensity on deposition of aluminum atoms. Also, a recovery of intensity was observed on exposure to H2O. This recovery is contributed to removal of methyl groups from the surface, resulting in an improvement of surface roughness. Finally, the intensity decay is analysed using a simple growth model.
Item Type:Conference or Workshop Item
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Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/67716
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