Nanoscale topography-capacitance correlation in high-K films: Interface heterogeneity related electrical properties

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Sturm, J.M. and Zinine, A.I. and Wormeester, H. and Poelsema, B. and Bankras, R.G. and Holleman, J. and Schmitz, J. (2005) Nanoscale topography-capacitance correlation in high-K films: Interface heterogeneity related electrical properties. Journal of Applied Physics, 98 (7). 076104-1. ISSN 0021-8979

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Abstract:Kelvin probe force microscopy in ultrahigh vacuum was used to study inhomogeneities of the contact potential difference (CPD) and differential capacitance of thin atomic layer deposited Al2O3 films. CPD fluctuations correlate equally strongly with the surface topography for deposition on hydrogen-terminated Si and thermal SiO2. The correlation of the differential capacitance with the topography clearly distinguishes films based on the starting surface. The lateral electrical homogeneity of these thin oxides depends crucially on their initial nucleation.
Item Type:Article
Copyright:© 2012 American Institute of Physics
Faculty:
Science and Technology (TNW)
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/67711
Official URL:http://dx.doi.org/10.1063/1.2077840
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