An approach to modeling of silicon oxidation in a wet ultra-diluted ambient

Kovalgin, A.Y. and Hof, A.J. and Schmitz, J. (2005) An approach to modeling of silicon oxidation in a wet ultra-diluted ambient. Microelectronic Engineering, 80 . pp. 432-435. ISSN 0167-9317

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Abstract:	In this work, we make steps towards developing a new wet-oxidation model of silicon based on electron-stimulated dissociation of H2O molecules. The need for a new model arises from the fact that existing physical models are inadequate to describe the thin-oxide regime. Two regimes of silicon oxidation are assumed to exist. The first regime responsible for the growth of up to 2-nm thick oxides including native oxides, considers electron tunneling through the growing oxide. The second regime occurs for thicker oxides and involves conventional diffusion of H2O molecules.
Item Type:	Article
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/67707
Official URL:	http://dx.doi.org/10.1016/j.mee.2005.04.101
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