An approach to modeling of silicon oxidation in a wet ultra-diluted ambient

Share/Save/Bookmark

Kovalgin, A.Y. and Hof, A.J. and Schmitz, J. (2005) An approach to modeling of silicon oxidation in a wet ultra-diluted ambient. Microelectronic Engineering, 80 . pp. 432-435. ISSN 0167-9317

[img]PDF
Restricted to UT campus only
: Request a copy
190Kb
Abstract:In this work, we make steps towards developing a new wet-oxidation model of silicon based on electron-stimulated dissociation of H2O molecules. The need for a new model arises from the fact that existing physical models are inadequate to describe the thin-oxide regime. Two regimes of silicon oxidation are assumed to exist. The first regime responsible for the growth of up to 2-nm thick oxides including native oxides, considers electron tunneling through the growing oxide. The second regime occurs for thicker oxides and involves conventional diffusion of H2O molecules.
Item Type:Article
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/67707
Official URL:http://dx.doi.org/10.1016/j.mee.2005.04.101
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page