Laterally resolved electrical characterisation of high-L oxides with non-contact Atomic Force Microscopy

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Sturm, J.M. and Zinine, A. and Wormeester, H. and Bankras, R.G. and Holleman, J. and Schmitz, J. and Poelsema, B. (2005) Laterally resolved electrical characterisation of high-L oxides with non-contact Atomic Force Microscopy. Microelectronic Engineering, 80 . pp. 78-81. ISSN 0167-9317

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Abstract:Fixed oxide charges in atomic layer deposited (ALD) Al2O3 on hydrogen-terminated Si were observed by ultra-high vacuum (UHV) non-contact AFM with a conductive tip. Comparison of bias-dependent images with a spherical tip model showed the importance of the tip image in the substrate for a quantitative understanding of the image contrast. The Contact Potential Difference and differential capacitance were probed by means of bias modulation and lock-in detection at the 1st and 2nd harmonic, respectively. A difference in topography-capacitance cross-correlation was found between Al2O3 deposited on hydrogen-terminated Si and thermal SiO2, which can be attributed to substrate-inhibited versus non-inhibited deposition.
Item Type:Article
Copyright:© 2005 Elsevier
Faculty:
Science and Technology (TNW)
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/67706
Official URL:http://dx.doi.org/10.1016/j.mee.2005.04.015
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Metis ID: 224514