Laterally resolved electrical characterisation of high-L oxides with non-contact Atomic Force Microscopy

Sturm, J.M. and Zinine, A. and Wormeester, H. and Bankras, R.G. and Holleman, J. and Schmitz, J. and Poelsema, B. (2005) Laterally resolved electrical characterisation of high-L oxides with non-contact Atomic Force Microscopy. Microelectronic Engineering, 80 . pp. 78-81. ISSN 0167-9317

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Abstract:	Fixed oxide charges in atomic layer deposited (ALD) Al2O3 on hydrogen-terminated Si were observed by ultra-high vacuum (UHV) non-contact AFM with a conductive tip. Comparison of bias-dependent images with a spherical tip model showed the importance of the tip image in the substrate for a quantitative understanding of the image contrast. The Contact Potential Difference and differential capacitance were probed by means of bias modulation and lock-in detection at the 1st and 2nd harmonic, respectively. A difference in topography-capacitance cross-correlation was found between Al2O3 deposited on hydrogen-terminated Si and thermal SiO2, which can be attributed to substrate-inhibited versus non-inhibited deposition.
Item Type:	Article
Copyright:	© 2005 Elsevier
Faculty:	Science and Technology (TNW) Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Physics of Interfaces and Nanomaterials (PIN) Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/67706
Official URL:	http://dx.doi.org/10.1016/j.mee.2005.04.015
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Metis ID: 224514