A 1-V 15 μW High-Accuracy Temperature Switch

Share/Save/Bookmark

Schinkel, D. and Boer de, R.P. and Annema, A.J. and Tuijl van, A.J.M. (2004) A 1-V 15 μW High-Accuracy Temperature Switch. Analog Integrated Circuits and Signal Processing, 41 (1). pp. 13-20. ISSN 0925-1030

[img]PDF
Restricted to UT campus only
: Request a copy
181Kb
Abstract: A CMOS temperature switch with uncalibrated high accuracy is presented. The circuit is based on the classical CMOS bandgap reference structure, using parasitic PNPs and a PTAT multiplier. The circuit was designed in a standard digital 0.18 m CMOS process. The temperature switch has an in-designed hysteresis of 1.2°C around a threshold value of 128°C. At the switching-threshold all matched transistors have also matched operating conditions, yielding a temperature threshold that is highly independent of transistor output resistance and supply voltage. The chip area was minimized using a novel and generic strategy. With a chip area of only 0.03 mm2, the onwafer 3 spread of the threshold temperature is 1.1°C. Power consumption is only 15 A at 1 volt supply.
Item Type:Article
Copyright:© 2004 Springer
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/67659
Official URL:http://dx.doi.org/10.1023/B:ALOG.0000038279.08039.a0
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page

Metis ID: 220567