A 1-V 15 μW High-Accuracy Temperature Switch

Schinkel, D. and Boer de, R.P. and Annema, A.J. and Tuijl van, A.J.M. (2004) A 1-V 15 μW High-Accuracy Temperature Switch. Analog Integrated Circuits and Signal Processing, 41 (1). pp. 13-20. ISSN 0925-1030

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Abstract:	A CMOS temperature switch with uncalibrated high accuracy is presented. The circuit is based on the classical CMOS bandgap reference structure, using parasitic PNPs and a PTAT multiplier. The circuit was designed in a standard digital 0.18 m CMOS process. The temperature switch has an in-designed hysteresis of 1.2°C around a threshold value of 128°C. At the switching-threshold all matched transistors have also matched operating conditions, yielding a temperature threshold that is highly independent of transistor output resistance and supply voltage. The chip area was minimized using a novel and generic strategy. With a chip area of only 0.03 mm2, the onwafer 3 spread of the threshold temperature is 1.1°C. Power consumption is only 15 A at 1 volt supply.
Item Type:	Article
Copyright:	© 2004 Springer
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Integrated Circuit Design (ICD)
Link to this item:	http://purl.utwente.nl/publications/67659
Official URL:	http://dx.doi.org/10.1023/B:ALOG.0000038279.08039.a0
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