High-speed lateral polysilicon photodiode in standard CMOS


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Radovanović, S. and Annema, A.J. and Nauta, B. (2003) High-speed lateral polysilicon photodiode in standard CMOS. In: 33th European Solid-State Device Research Conference, ESSDERC 2003, 16-18 September 2003, Estoril, Portugal (pp. pp. 521-524).

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Abstract:A high-performance lateral polysilicon photodiode was designed in standard 0.18 μm CMOS technology. The device has a frequency bandwidth far in the GHz range: the measured bandwidth of the poly photodiode was 6 GHz, which figure was limited by the measurement equipment. The high intrinsic (physical) bandwidth is due to a short excess carrier lifetime. The external (electrical) bandwidth is also high because of a very small parasitic capacitance (< 0.1 pF). This is the best bandwidth performance among all reported diodes designed in a standard CMOS. The quantum efficiency of this poly photodiode is 0.2% due to the very small light sensitive diode volume. The diode active area is limited by a narrow depletion region and its depth by the technology.
Item Type:Conference or Workshop Item
Copyright:© 2004 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/67650
Official URL:http://dx.doi.org/10.1109/ESSDERC.2003.1256928
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