A 1-V 15µW high-precision temperature switch


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Schinkel, D. and Boer, R.P. de and Annema, A.J. and Tuijl, A.J.M. van (2001) A 1-V 15µW high-precision temperature switch. In: 27th European Solid-State Circuits Conference, ESSCIRC 2001, 18-20 September 2001, Villach, Austria (pp. pp. 77-80).

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Abstract:A CMOS temperature switch with uncalibrated high temperature accuracy is presented. The circuit is based on the classical CMOS bandgap reference structure, using parasitic PNPs and a PTAT multiplier. The circuit was designed in a standard digital 0.18 µm CMOS process. The temperature switch has a in-designed hysteresis of 1.2° C around a threshold value of 128° C. At the switching-threshold all matched transistors have also matched operating conditions, yielding a temperature threshold that is highly independent of transistor output resistance and supply voltage. With a chip area of only 0.03 mm2:, the on-wafer 3σ spread of the threshold temperature is 1.1° C. Power consumption is only 15 µA at 1 Volt supply.
Item Type:Conference or Workshop Item
Copyright:© 2001 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/67636
Official URL:http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1471338
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