Multi-silicon ridge nanofabrication by repeated edge lithography


Zhao, Y. and Berenschot, J.W. and Jansen, H.V. and Tas, N.R. and Huskens, J. and Elwenspoek, M.C. (2009) Multi-silicon ridge nanofabrication by repeated edge lithography. Nanotechnology, 20 (315305). p. 315305. ISSN 0957-4484

open access
Abstract:We present a multi-Si nanoridge fabrication scheme and its application in nanoimprint
lithography (NIL). Triple Si nanoridges approximately 120 nm high and 40 nm wide separated
by 40 nm spacing are fabricated and successfully applied as a stamp in nanoimprint lithography.
The fabrication scheme, using a full-wet etching procedure in combination with repeated edge
lithography, consists of hot H3PO4 acid SiNx retraction etching, 20% KOH Si etching, 50% HF
SiNx retraction etching and LOCal Oxidation of Silicon (LOCOS). Si nanoridges with smooth
vertical sidewalls are fabricated by using Si 110 substrates and KOH etching. The presented
technology utilizes a conventional photolithography technique, and the fabrication of multi-Si
nanoridges on a full wafer scale has been demonstrated.
Item Type:Article
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Science and Technology (TNW)
Research Group:
Link to this item:
Official URL:
Export this item as:BibTeX
HTML Citation
Reference Manager


Repository Staff Only: item control page

Metis ID: 259868