The effect of dislocation loops on the light emission of silicon LEDs

Hoang, T. and Le Minh, P. and Holleman, J. and Schmitz, J. (2005) The effect of dislocation loops on the light emission of silicon LEDs. In: Proceedings of 5th European Solid-State Device Research Conference (ESSDERC) 2005, 12-16 Sep 2005, Grenoble, France.

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Abstract:	Recently, different and apparently contradicting results were published regarding the influence of crystal defects on the light emission efficiency of silicon LEDs at room temperature [1-6]. In this paper we report our results on light emission of silicon p+n diodes with various defect engineering approaches. The p+ region was formed either by ion implantation or by diffusion; and optionally, additional lattice damage was created by silicon ion implantation. The experiments clearly indicate that lattice defects have a detrimental effect on light emission, contrary to the results published in recent years.
Item Type:	Conference or Workshop Item
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/67535
Official URL:	http://dx.doi.org/10.1109/ESSDER.2005.1546659
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