The effect of dislocation loops on the light emission of silicon LEDs


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Hoang, T. and Le Minh, P. and Holleman, J. and Schmitz, J. (2005) The effect of dislocation loops on the light emission of silicon LEDs. In: Proceedings of 5th European Solid-State Device Research Conference (ESSDERC) 2005, 12-16 Sep 2005, Grenoble, France (pp. pp. 359-362).

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Abstract:Recently, different and apparently contradicting results were published regarding the influence of crystal defects on the light emission efficiency of silicon LEDs at room temperature [1-6]. In this paper we report our results on light emission of silicon p+n diodes with various defect engineering approaches. The p+ region was formed either by ion implantation or by diffusion; and optionally, additional lattice damage was created by silicon ion implantation. The experiments clearly indicate that lattice defects have a detrimental effect on light emission, contrary to the results published in recent years.
Item Type:Conference or Workshop Item
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Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/67535
Official URL:http://dx.doi.org/10.1109/ESSDER.2005.1546659
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