Charging damage in floating metal-insulator-metal capacitors

Ackaert, Jan and Wang, Zhichun and De Backer, E. and Coppens, P. (2002) Charging damage in floating metal-insulator-metal capacitors. In: 6th International Symposium on Plasma Process-Induced Damage, 13-15 May 2001, Monterey, California, USA.

Preview

PDF
344Kb

Abstract:	In this paper, charging induced damage (CID) to metal-insulator-metal capacitors (MIMC) is reported. The damage is caused by the build up of a voltage potential difference between the two plates of the capacitor. A simple logarithmic relation is discovered between the damage by this voltage potential and the ratio of the area of the exposed antennas connected to the plates of the MIMC. This function allows anticipation of damage in MIMC devices with long interconnects. The source of the damage is still the subject of further investigation
Item Type:	Conference or Workshop Item
Copyright:	© 2002 IEEE
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/67507
Official URL:	http://dx.doi.org/10.1109/PPID.2001.929993
Export this item as:	BibTeX EndNote HTML Citation Reference Manager

Show download statistics for this publication

Repository Staff Only: item control page

Metis ID: 113958