Temperature effect on protection diode for plasma-process induced charging damage


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Wang, Z. and Scarpa, A. and Smits, S.M. and Kuper, F.G. and Salm, C. (2002) Temperature effect on protection diode for plasma-process induced charging damage. In: Proceedings of the 5th annual workshop on Semiconductors Advances for Future Electronics SAFE 2002, 27-28 November 2002, Veldhoven, The Netherlands (pp. pp. 127-130).

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Abstract:In this paper, the leakage current of different drain-well diodes for plasma-charging protection has been simulated at high temperature. The simulation shows that the high ambient temperature, especially during plasma deposition process, enormously enhances the efficacy of the protection diodes in protecting thin oxide. The efficacy of different diodes has been compared by simulation and experiment. Based on our discoveries, a strategic protection scheme for plasma -process induced damage (PPID) is proposed.
Item Type:Conference or Workshop Item
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/67506
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