Test structure design considerations for RF-CV measurements on leaky dielectrics

Schmitz, J. and Cubaynes, F.N. and Havens, R.J. and Kort de, R. and Scholten, A.J. and Tiemeijer, L.F. (2003) Test structure design considerations for RF-CV measurements on leaky dielectrics. In: International Conference on Microelectronic Test Structures, 2003, 17-20 March 2003, Monterey, California, USA.

PDF
Restricted to UT campus only: Request a copy
332Kb

Abstract:	We present a MOS capacitance-voltage measurement methodology that, contrary to present methods, is highly robust against gate leakage current densities up to 1000 A/cm/sup 2/. The methodology features specially designed RF test structures and RF measurement frequencies. It allows MOS parameter extraction in the full range of accumulation, depletion and inversion.
Item Type:	Conference or Workshop Item
Copyright:	© 2003 IEEE
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/67501
Official URL:	http://dx.doi.org/10.1109/ICMTS.2003.1197458
Export this item as:	BibTeX EndNote HTML Citation Reference Manager

Show download statistics for this publication

Repository Staff Only: item control page

Metis ID: 213273