Record RF performance of standard 90 nm CMOS technology


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Tiemeijer, L.F. and Havens, R.J. and Kort, R. de and Scholten, A.J. and Langevelde, R. van and Klaassen, D.B.M. and Sasse, G.T. and Bouttement, Y. and Petot, C. and Bardy, S. and Gloria, D. and Scheer, P. and Boret, S. and Haaren, B. van and Clement, C. and Larchanche, J-F. and Lim, I-S. and Duvallet, A. and Zlotnicka, A. (2005) Record RF performance of standard 90 nm CMOS technology. In: IEEE International Electron Devices Meeting 2004, 13-15 December 2004, San Francisco, California, USA (pp. pp. 441-444).

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Abstract:We have optimized 3 key RF devices realized in standard logic 90 nm CMOS technology and report a record performance in terms of n-MOS maximum oscillation frequency f/sub max/ (280 GHz), varactor tuning range and varactor and inductor quality factor.
Item Type:Conference or Workshop Item
Copyright:© 2005 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/67491
Official URL:http://dx.doi.org/10.1109/IEDM.2004.1419181
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Metis ID: 219036