Monolithically Integrated Photo-Diodes in Standard CMOS Technology for high speed optical communication: General Consideration and Analysis

Radovanović, Saša and Annema, Anne Johan and Nauta, Bram (2002) Monolithically Integrated Photo-Diodes in Standard CMOS Technology for high speed optical communication: General Consideration and Analysis. In: ProRISC 2002, 13th Workshop on Circuits, Systems and Signal Processing, 28-29 November 2002, Veldhoven, the Netherlands.

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Abstract:	Photodiodes designed in standard CMOS technology which can be monolithically integrated in high-speed optical receivers are analyzed and the advantages and drawbacks concerning bandwidth with respect to the diode geometry and structure, are discussed. Studied photodiode structures that can be realized in standard CMOS technology are: 1) N-well/Psubstrate, 2) lateral N-well/P-substrate (exploiting only depletion region in between) 3) N+/P-substrate and 4) P+/N-well/P-substrate diodes. The maximal operating frequency as well as the impulse response of the diodes are calculated using 2-D model semiconductor device analysis.
Item Type:	Conference or Workshop Item
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Integrated Circuit Design (ICD)
Link to this item:	http://purl.utwente.nl/publications/67438
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