Measurement of the Low Frequency Noise of MOSFETs under Large Signal RF Excitation


Share/Save/Bookmark

Wel, A.P. van der and Klumperink, E.A.M. and Nauta, B. (2002) Measurement of the Low Frequency Noise of MOSFETs under Large Signal RF Excitation. In: ProRISC 2002, 13th Workshop on Circuits, Systems and Signal Processing, 28-29 November 2002, Veldhoven, the Netherlands (pp. pp. 543-546).

open access
[img]
Preview
PDF
462kB
Abstract:A measurement technique [1] is presented that
allows measurement of MOSFET low frequency (LF) noise
under large signal RF (Radio Frequency) excitation. Measurements
indicate that MOSFETS exhibit a reduction in LF
noise when they are cycled from inversion to accummulation
and that this reduction does not depend on the frequency of
excitation for excitation frequencies of up to 3 GHz.
The measurement results are significant because MOSFET
LF noise is important in the design of RF CMOS
circuits such as oscillators and mixers, where large signal
swings occur. Additionally, the measurement results give
new insights into the LF noise generating mechanisms in
MOSFETs.
Item Type:Conference or Workshop Item
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/67435
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page