Ultra-thin plasma nitride oxide gate dielectrics for advanced MOS transistors


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Cubaynes, Florence Nathalie (2004) Ultra-thin plasma nitride oxide gate dielectrics for advanced MOS transistors. thesis.

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Abstract:Ultra-thin plasma nitrided oxides have been optimized with the objective to decrease JG and maximize carrier mobility. It was found that while the base oxide cannot be aggressively scaled, plasma optimization yields better mobility thereby increase transistor performance. A summary of the EOT versus gate leakage current density of NMOS devices with plasma nitrided oxides is shown in Figure 5.19. EOT down to 1.2 nm has been achieved with a gate leakage current density of 40 A/cm2 at 1 V operating voltage.
Item Type:Thesis
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/67298
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Metis ID: 218043