Radiative ballistic phonon transport in silicon-nitride membranes at low temperatures

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Hoevers, H.F.C. and Ridder, M.L. and Germeau, A. and Bruijn, M.P. and Korte, P.A.J. de and Wiegerink, R.J. (2005) Radiative ballistic phonon transport in silicon-nitride membranes at low temperatures. Applied Physics Letters, 86 . p. 251903. ISSN 0003-6951

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Abstract:We studied the phonon transport in free-standing 1 µm thick silicon-nitride membranes at temperatures around 100 mK. By varying the geometry of the membranes and the dimensions of the heater element, we are able to distinguish between radiative and diffuse phonon transport. The data indicate that the transport is radiative ballistic with a lower limit to a phonon mean-free path of about 1 mm and that the probability for specular reflection from the surface is at least 0.99. The tested silicon-nitride membranes were grown on Si(100), Si(110), and polycrystalline-Si and the transport properties show no dependency on the substrate
Item Type:Article
Copyright:© 2005 American Institute of Physics
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/67149
Official URL:http://dx.doi.org/10.1063/1.1949269
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Metis ID: 228493