Time and voltage dependence of dielectric charging in RF MEMS capacitive switches

Herfst, R.W. and Steeneken, P.G. and Schmitz, J. (2007) Time and voltage dependence of dielectric charging in RF MEMS capacitive switches. In: 45th Annual IEEE International Reliability Physics Symposium, IRPS 2007, 15-19 April 2007, Phoenix, Arizona.

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Abstract:	A major issue in the reliability of RF MEMS capacitive switches is charge injection in the dielectric. In this study we try to establish the time and voltage dependence of dielectric charging in RF MEMS with silicon nitride as a dielectric. It is shown that the voltage shift of the CV-curve due to injected charge shows a √t dependence over a large time range. By doing measurements on a large number of devices (early development material made at NXP Semiconductors in Nijmegen) we further show that the charging rate increases exponentially with the applied stress voltage.
Item Type:	Conference or Workshop Item
Copyright:	© 2007 IEEE
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/67084
Official URL:	http://dx.doi.org/10.1109/RELPHY.2007.369926
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