Test structures for accurate UHF C-V measurements of nano-scale CMOSFETs with HfSiON and TiN metal gate

Lee, Kyong-Taek and Schmitz, Jurriaan and Brown, George A. and Heh, Dawei and Choi, Rino and Harris, Rusty and Song, Seung-Chul and Lee, Byoung Hun and Han, In-Sikh and Lee, Hi-Deok and Jeong, Yoon-Ha (2007) Test structures for accurate UHF C-V measurements of nano-scale CMOSFETs with HfSiON and TiN metal gate. In: IEEE International Conference on Microelectronic Test Structures, ICMTS 2007, 19-22 March 2007, Tokyo, Japan.

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Abstract:	Test structures for accurate UHF capacitance-voltage (C-V) measurements of high performance CMOSFETs with Hf-based high-k dielectric and TiN metal gate are analyzed. It is shown that series resistance or substrate resistance between the channel region and body contact plays a role in UHF C-V measurements. The substrate resistance beneath the gate region also impacts accurate UHF C-V measurements. Therefore, minimization of series resistance through short gate lengths with a minimum distance between the source/drain and body contact is highly desired for an accurate evaluation of gate dielectric thickness using UHF C-V measurements.
Item Type:	Conference or Workshop Item
Copyright:	© 2007 IEEE
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/67079
Official URL:	http://dx.doi.org/10.1109/ICMTS.2007.374468
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