Strong efficiency improvement of SOI-LEDs through carrier confinement

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Hoang, T. and Le Minh, P. and Holleman, J. and Schmitz, J. (2007) Strong efficiency improvement of SOI-LEDs through carrier confinement. IEEE electron device letters, 28 (5). pp. 383-385. ISSN 0741-3106

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Abstract:Contemporary silicon light-emitting diodes in silicon-on-insulator (SOI) technology suffer from poor efficiency compared to their bulk-silicon counterparts. In this letter, we present a new device structure where the carrier injection takes place through silicon slabs of only a few nanometer thick. Its external quantum efficiency of 1.4 • 10−4 at room temperature, with a spectrum peaking at 1130 nm, is almost two orders higher than reported thus far on SOI. The structure diminishes the dominant role of nonradiative recombination at the n+ and p+contacts, by confining the injected carriers in an SOI peninsula.
With this approach, a compact infrared light source can be fabricated using standard semiconductor processing steps.
Item Type:Article
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Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/67077
Official URL:http://dx.doi.org/10.1109/LED.2007.895415
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