A capacitive rf power sensor based on mems technology

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Fernandez, L.J. and Wiegerink, R.J. and Flokstra, J. and Sesé, J. and Jansen, H.V. and Elwenspoek, M.C. (2006) A capacitive rf power sensor based on mems technology. Journal of Micromechanics and Microengineering, 16 . S1099-S1107. ISSN 0960-1317

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Abstract:Wideband 100 kHz–4 GHz power sensors are presented, which are based on sensing the electrostatic force between an RF signal line and a suspended membrane. The electrostatic force, which is proportional to the square of
the rms signal voltage and thus to the signal power, results in a displacement of the suspended membrane. This displacement is detected capacitively, allowing the sensing of the signal power with extremely low dissipative
losses; therefore the sensor can be placed in a transmission line with negligible disturbance of the signal. Devices have been designed and fabricated successfully by aluminum surface micromachining using
photoresist as the sacrificial layer. Optimization of the design with SONNET has resulted in measured return and insertion losses (S11 and S21) better than −30 dB and −0.15 dB, respectively, up to 4 GHz, and a sensitivity of 90 aF mW–1.
Item Type:Article
Copyright:© 2010 IOP Publishing
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/66907
Official URL:http://dx.doi.org/10.1088/0960-1317/16/7/001
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