Nano-ridge fabrication by local oxidation of silicon edges with silicon nitride as a mask

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Haneveld, Jeroen and Berenschot, Erwin and Maury, Pascale and Jansen, Henri (2006) Nano-ridge fabrication by local oxidation of silicon edges with silicon nitride as a mask. Journal of Micromechanics and Microengineering, 16 (6). S24-S28. ISSN 0960-1317

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Abstract:A method to fabricate nano-ridges over a full wafer is presented. The fabrication method uses local oxidation of silicon, with silicon nitride as a mask, and wet anisotropic etching of silicon. The realized structures are
7–20 nm wide, 40–100 nm high and centimeters long. All dimensions are easily adjustable by varying the oxidation time, the wet etching time and the
mask geometry, respectively. As an additional advantage, the method features a spatial frequency doubling effect. This can be helpful in realizing higher feature densities than would be possible using conventional
lithography.
Item Type:Article
Copyright:© 2006 IOP Publishing
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/66854
Official URL:http://dx.doi.org/10.1088/0960-1317/16/6/S05
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