$AL_{2}O_{3}$ and $Y_{2}O_{3}$ Thin Films for Active Integrated Optical Waveguide Devices

Bradley, J.D.B. and Ay, F. and Wörhoff, K. and Pollnau, M. (2006) $AL_{2}O_{3}$ and $Y_{2}O_{3}$ Thin Films for Active Integrated Optical Waveguide Devices. In: IEEE/LEOS Benelux Chapter 2006 Annual Symposium, November 30 - December 1, 2006, Eindhoven, The Netherlands.

Preview

PDF
89Kb

Abstract:	$Al_{2}O_{3}$ and $Y_{2}O_{3}$ are both very promising host materials for active integrated optics applications such as rare-earth ion doped waveguide lasers. In this paper, a reactive co-sputtering process for stable, target condition-independent deposition of $Al_{2}O_{3}$ layers with high optical quality is discussed. The loss of as-deposited $Al_{2}O_{3}$ waveguides in the near infrared wavelength range was 0.3 dB/cm. Reactive ion etching of both $Al_{3}O_{2}$ and $Y_{2}O_{3}$ thin films for defining channel waveguide structures was investigated and compared using $CF_{4}/O_{2}, BCl_{3}, HBr$ and $CL_{2}$ inductively coupled plasmas.
Item Type:	Conference or Workshop Item
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Integrated Optical MicroSystems (IOMS)
Link to this item:	http://purl.utwente.nl/publications/66701
Export this item as:	BibTeX EndNote HTML Citation Reference Manager

Show download statistics for this publication

Repository Staff Only: item control page

Metis ID: 237728

and Thin Films for Active Integrated Optical Waveguide Devices

$AL_{2}O_{3}$ and $Y_{2}O_{3}$ Thin Films for Active Integrated Optical Waveguide Devices