Cobalt-Al2O3-silicon tunnel contacts for electrical spin injection into silicon

Min, B.C. and Lodder, J.C. and Jansen, R. and Motohashi, K. (2006) Cobalt-Al2O3-silicon tunnel contacts for electrical spin injection into silicon. Journal of applied physics, 99 (08S701). ISSN 0021-8979

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Abstract:	The resistance of Co–Al2O3–Si tunnel contacts for electrical spin injection from a ferromagnet into silicon is investigated. The contacts form a substantial Schottky barrier, 0.7 eV, which plays a dominant role in the electronic transport. On Si with a low doping concentration ( ∼ 1015 cm−3), the contact resistance is affected by the Al2O3 tunnel barrier only in the forward bias. In the reverse bias (the spin injection condition), the Schottky barrier results in a very high contact resistance, ∼ 102 Ω m2. While the contact resistance is improved to ∼ 10−2 Ω m2 using Si with a high doping concentration ( ∼ 5×1019 cm−3), it is still about five to six orders of magnitude higher than the value needed for resistance matching to silicon
Item Type:	Article
Copyright:	© 2006 American Institute of Physics
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Nano-Electronics (NE) Transducers Science and Technology (TST)
Link to this item:	http://purl.utwente.nl/publications/66039
Official URL:	http://dx.doi.org/10.1063/1.2176317
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