The charge plasma P-N diode

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Hueting, R.J.E. and Rajasekharan, B. and Salm, C. and Schmitz, J. (2008) The charge plasma P-N diode. IEEE electron device letters, 29 (12). pp. 1367-1369. ISSN 0741-3106

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Abstract:A simulation study on a new rectifier concept is presented. This device basically consists of two gates with different workfunctions on top of a thin intrinsic or lowly doped silicon body. The workfunctions and layer thicknesses are chosen such that an electron plasma is formed on one side of the silicon body and a hole plasma on the other, i.e., a charge plasma p-n diode is formed in which no doping is required. Simulation results reveal a good rectifying behavior for well-chosen gate workfunctions and device dimensions. This concept could be applied for other semiconductor devices and materials as well in which doping is an issue.
Item Type:Article
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Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/65374
Official URL:http://dx.doi.org/10.1109/LED.2008.2006864
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