Reactively co-sputtered $Al_2O_3:Er^{3+}$ for active photonic devices

Bradley, J.D.B. and Agazzi, L. and Geskus, D. and Ay, F. and Wörhoff, K. and Pollnau, M. (2008) Reactively co-sputtered $Al_2O_3:Er^{3+}$ for active photonic devices. In: 2008 Annual Workshop of the IEEE LEOS Benelux Chapter "Materials, Devices and Systems in Optics and Photonics, 30-5-2008, Brussels, Belgium.

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Abstract:	Reactive co-sputtering has been applied as a low-cost method for deposition of $Al_2O_3:Er^{3+}$ layers. Channel waveguide fabrication has been optimized and results in waveguides with low background losses (0.21 dB/cm), demonstrating the feasibility of realizing active photonic devices. A net optical gain of 0.84 dB/cm for a 1533-nm signal has been obtained in a 700-nm-thick Er3+-doped $Al_2O_3$ waveguide pumped at 980 nm, which is the highest gain demonstrated thus far in this material.
Item Type:	Conference or Workshop Item
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Integrated Optical MicroSystems (IOMS)
Link to this item:	http://purl.utwente.nl/publications/65315
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Reactively co-sputtered for active photonic devices

Reactively co-sputtered $Al_2O_3:Er^{3+}$ for active photonic devices