Reactively co-sputtered $Al_2O_3:Er^{3+}$ for active photonic devices


Share/Save/Bookmark

Bradley, J.D.B. and Agazzi, L. and Geskus, D. and Ay, F. and Wörhoff, K. and Pollnau, M. (2008) Reactively co-sputtered $Al_2O_3:Er^{3+}$ for active photonic devices. In: 2008 Annual Workshop of the IEEE LEOS Benelux Chapter "Materials, Devices and Systems in Optics and Photonics, 30-5-2008, Brussels, Belgium.

[img]
Preview
PDF
154Kb
Abstract:Reactive co-sputtering has been applied as a low-cost method for deposition of $Al_2O_3:Er^{3+}$ layers. Channel waveguide fabrication has been optimized and results in waveguides with low background losses (0.21 dB/cm), demonstrating the feasibility of realizing active photonic devices. A net optical gain of 0.84 dB/cm for a 1533-nm signal has been obtained in a 700-nm-thick Er3+-doped $Al_2O_3$ waveguide pumped at 980 nm, which is the highest gain demonstrated thus far in this material.
Item Type:Conference or Workshop Item
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/65315
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page

Metis ID: 255135