Er-doped aluminium oxide waveguide amplifiers


Pollnau, M. (2008) Er-doped aluminium oxide waveguide amplifiers. In: Book of Abstract Workshop on Sensitized Er Doped Waveguide Amplifier/Laser, 13-15 April 2008, Levico Terme - Trento - Italy (pp. p. 14).

open access
Abstract:Within the EU STREP project "Photonic integrated devices in activated amorphous and crystalline oxides" (PI-OXIDE,, 6 partners are developing integrated optical devices based on erbium-doped layers of amorphous $Al_2O_3$ and crystalline $Y_2O_3)$. In $Al_2O_3$:Er channel waveguides structured by chlorine-based reactive ion etching [1], we have recently achieved gain with a maximum of 0.7 dB/cm at 1533 nm and a tuneability of 35 nm [2].
Item Type:Conference or Workshop Item
Additional information:Invited Talk
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:
Export this item as:BibTeX
HTML Citation
Reference Manager


Repository Staff Only: item control page

Metis ID: 255126