Er-doped aluminium oxide waveguide amplifiers

Pollnau, M. (2008) Er-doped aluminium oxide waveguide amplifiers. In: Book of Abstract Workshop on Sensitized Er Doped Waveguide Amplifier/Laser, 13-15 April 2008, Levico Terme - Trento - Italy.

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Abstract:	Within the EU STREP project "Photonic integrated devices in activated amorphous and crystalline oxides" (PI-OXIDE, http://pi-oxide.el.utwente.nl/), 6 partners are developing integrated optical devices based on erbium-doped layers of amorphous $Al_2O_3$ and crystalline $Y_2O_3)$ . In $Al_2O_3$ :Er channel waveguides structured by chlorine-based reactive ion etching [1], we have recently achieved gain with a maximum of 0.7 dB/cm at 1533 nm and a tuneability of 35 nm [2].
Item Type:	Conference or Workshop Item
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Integrated Optical MicroSystems (IOMS)
Link to this item:	http://purl.utwente.nl/publications/65307
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