BiCMOS technology improvements for microwave application


Noort, W.D. van and Rodriguez, A. and HongJiang, S. and Zaato, F. and Zhang, N. and Nesheiwat, T. and Neuilly, F. and Melai, J. and Hijzen, E. (2008) BiCMOS technology improvements for microwave application. In: Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2008 (BCTM 2008)., 13-15 Oct 2008, Monterey, CA, USA (pp. pp. 93-96).

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Abstract:The third generation of NXP 0.25 μm SiGe BiCMOS technology (QUBiC4Xi) is presented. The NPN has fT/fmax of 216/177 GHz and BVcb0 of 5.2 V. The high-voltage NPN has 12 V BVcb0, and fT/fmax of 80/162 GHz. This is complemented with an improved MIM capacitor with 1THz cutoff frequency and new on-chip isolation structures that demonstrate a record |S12| of −60 dB at 10 GHz.
Item Type:Conference or Workshop Item
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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