Enhanced gain in Er-doped $Al_2O_3$ channel waveguide amplifiers


Bradley, J.D.B. and Agazzi, L. and Geskus, D. and Ay, F. and Wörhoff, K. and Pollnau, M. and Arnoldbik, W.M. (2008) Enhanced gain in Er-doped $Al_2O_3$ channel waveguide amplifiers. In: 13th Annual Symposium of the IEEE LEOS Benelux Chapter, 27-28 November 2008, Enschede, The Netherlands (pp. pp. 131-134).

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Abstract:Erbium-doped aluminum oxide amplifiers with varying erbium concentration have been fabricated on thermally oxidized silicon substrates. Significant net internal gain of up to 1.6 dB/cm has been measured at 1533 nm for the optimum Er concentration. Furthermore, net gain has been demonstrated over a wavelength range of 40 nm, including the telecom C-band, demonstrating the potential for amplifiers or tunable lasers on a silicon platform at these critical wavelengths.
Item Type:Conference or Workshop Item
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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