Monolithics silicon nano-ridge fabrication by edge lithography and wet anisotropic etching of silicon

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Zhao, Y. and Berenschot, J.W. and Jansen, H.V. and Tas, N.R. and Huskens, J. and Elwenspoek, M.C. (2008) Monolithics silicon nano-ridge fabrication by edge lithography and wet anisotropic etching of silicon. In: 34th International Conference on Micro & Nano Enginering, 15-18 Sept 2008, Greece (pp. p. 221).

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Abstract:A new nanofabrication scheme is presented to form stamps useful in thermal nanoimprint lithography (T-NIL). The
stamp is created in <110> single crystalline silicon using a full wet etching procedure including local oxidation of silicon (LOCOS)and employing an adapted edge lithography technique on top of conventional photolithography. Ridges down to 10 nm in width have been produced. The silicon ridges have no inbuilt stress and are therefore less fragile than previously fabricated oxide ridges. The ridge sample is used as a template in T-NIL and a full 100 mm wafer size imprint has been successfully carried out in both
polymethylmethacrylate (PMMA) and mr-I 7020E polymer. Moreover, the imprinted pattern in PMMA is subsequently transferred into a device wafer
Item Type:Conference or Workshop Item
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Science and Technology (TNW)
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Link to this item:http://purl.utwente.nl/publications/65241
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