Thermal and plasma-enhanced oxidation of ALD TiN


Groenland, A.W. and Brunets, I. and Boogaard, A. and Aarnink, A.A.I. and Kovalgin, A.Y. and Schmitz, J. (2008) Thermal and plasma-enhanced oxidation of ALD TiN. In: 11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008, 27-28 November 2008, Veldhoven, The Netherlands (pp. pp. 468-471).

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Abstract:Despite its high chemical stability, sputtered stoichiometric TiN can still be oxidized at temperatures below 400 ºC, whereas a non-stoichiometric TiN is known to oxidize even at room temperature. In this work, the oxidation behaviour of thin TiN layers, realized via atomic layer deposition (ALD), is investigated. Our experiments on thermal oxidation of ALD TiN revealed the existence of a linear and parabolic regime. The extracted activation energies for the parabolic regime resemble the values obtained earlier for sputtered TiN (i.e., 2.0 eV and 1.55 eV for dry and wet oxidation, respectively). Oxidation of ALD TiN layers in reactive plasma’s showed the existence of two regimes; the first regime is linear and independent of temperature while the second regime depends on the temperature.
Item Type:Conference or Workshop Item
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Metis ID: 254995