Focused ion beam milling strategy for sub-micrometre holes in silicon


Hopman, Wico C.L. and Ay, Feridun and Ridder de, René M. (2008) Focused ion beam milling strategy for sub-micrometre holes in silicon. In: First International Workshop on FIB for Photonics, 13-14 June 2008, Eindhoven, the Netherlands.

Abstract:Focused ion beam (FIB) milling can be used as a tool to fabricate structures with sub-micrometer details. The slab material can be silicon, for example, which can then be used as a mould for nano-imprint lithography, or in silicon on insulator (SOI) layer configuration suitable for photonic applications. In the latter, additional effort has to be taken to prevent high FIB induced losses, due to ion implantation and material crystal damage. Perfectly vertical sidewalls are, in principle, required for photonic crystal applications to guarantee low-loss propagation; sidewall angles of 5 degrees can already induce a 8 dB/mm propagation loss. We report on optimization of the sidewall angle (FIB) fabricated submicron diameter holes. Our best case results show that sidewall angles as small as 1.5 degree are possible in Si membranes and 5 degree for (bulk) Si and SOI by applying larger doses and using a spiral scan method.
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Electrical Engineering, Mathematics and Computer Science (EEMCS)
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