Dimensional scaling effects on transport properties of ultrathin body p-i-n diodes


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Rajasekharan, B. and Salm, C. and Hueting, R.J.E. and Hoang, T. and Schmitz, J. (2008) Dimensional scaling effects on transport properties of ultrathin body p-i-n diodes. In: Proceedings of the 9th Conference on ULtimate Integration on Silicon, 12-14 Mar 2008, Udine, Italy (pp. pp. 195-198).

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Abstract:Device scaling has been a subject of research for both optoelectronics and electronics. In order to investigate the electronic properties of scaled devices we studied lateral p-i-n structures using thin silicon on insulator (SOI) or poly-Si layers of varying dimension.
With the help of these structures we try to explain the size dependencies on electronic transport properties. Further, we also propose a new device concept called charge plasma diode.
Item Type:Conference or Workshop Item
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/64873
Official URL:http://dx.doi.org/10.1109/ULIS.2008.4527172
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Metis ID: 251075