Dimensional scaling effects on transport properties of ultrathin body p-i-n diodes
Rajasekharan, B. and Salm, C. and Hueting, R.J.E. and Hoang, T. and Schmitz, J. (2008) Dimensional scaling effects on transport properties of ultrathin body p-i-n diodes. In: Proceedings of the 9th Conference on ULtimate Integration on Silicon, 12-14 Mar 2008, Udine, Italy.
|Abstract:||Device scaling has been a subject of research for both optoelectronics and electronics. In order to investigate the electronic properties of scaled devices we studied lateral p-i-n structures using thin silicon on insulator (SOI) or poly-Si layers of varying dimension.|
With the help of these structures we try to explain the size dependencies on electronic transport properties. Further, we also propose a new device concept called charge plasma diode.
|Item Type:||Conference or Workshop Item|
Electrical Engineering, Mathematics and Computer Science (EEMCS)
|Link to this item:||http://purl.utwente.nl/publications/64873|
|Export this item as:||BibTeX|
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Metis ID: 251075