Evaluation of Transmission Line Model Structures for Silicide-to-Silicon Specific Contact Resistance Extraction

Share/Save/Bookmark

Stavitski, Natalie and Dal van, Mark J.H. and Lauwers, Anne and Vrancken, Christa and Kovalgin, Alexey Y. and Wolters, Rob A.M. (2008) Evaluation of Transmission Line Model Structures for Silicide-to-Silicon Specific Contact Resistance Extraction. IEEE Transactions on Electron Devices, 55 (5). pp. 1170-1176. ISSN 0018-9383

[img]
Preview
PDF
425Kb
Abstract:In order to measure silicide-to-silicon specific contact resistance ρc, transmission line model (TLM) structures were proposed as attractive candidates for embedding in CMOS processes.
We optimized TLM structures for nickel silicide and platinum silicide and evaluated them for various doping levels of n- and p-type Si. The measurement limitations and accuracy of the specific contact resistance extraction from the optimized TLM structures are discussed in this paper.
Item Type:Article
Copyright:© 2008 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/64868
Official URL:http://dx.doi.org/10.1109/TED.2008.918658
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page

Metis ID: 251068